1. What are the mechanisms for pn junction breakdown at large reverse bias? Describe the physical origins using your own words.
2. Consider a GaAs pn junction diode at T = 300 K with parameters Nd = 8 × 1016 cm-3, Na = 2 × 1015 cm-3, Dn = 207 cm2/s, Dp = 9.80 cm2/s, and τ0 = τp0 = τn0 = 5 × 10-8 s. (a) Calculate the ideal reverse-biased saturation current density. (b) Find the reverse-biased generation current density if the diode is reverse biased at VR = 5 V. (c) Determine the ratio of Jgen to Js. Please provide the process of derivation.
