Consider silicon at T = 300 K with doping concentrations of Nd = 8 × 1015 cm-3 and Na = 5 × 1015 cm-3. Determine the position of the Fermi energy level with respect to the donor level Ed, as well as the Fermi energy level with respect to the acceptor level Ea.
Assume the donor concentration in an n-type semiconductor at T = 300 K is given by Nd(x) = 1016 e-x/L where L = 2 × 10-2 Determine the induced electric field in the semiconductor at (a) x = 0 and (b) x = 10-4 cm. Please provide the process of derivation.
