$30
1. [Common-Emitter Amplifier]
(a) Design and build a common-emitter amplifier in Proteus and on the breadboard which has a voltage gain Aυ > 10, using npn BJT 2N3904. Plot VOUT vs VIN. (Hint: First choose an appropriate RC. Second, perform DC sweep to find out a VIN at which the magnitude of slope is more than 10. At the same time, make sure the BJT is in the forward-active region. If not working, change for another RC and repeat the DC sweep analysis again.)
(b) For Vin = VIN + 0.01sin(2π102 ∙ time), plot Vout = VOUT + υout vs time. Confirm that the amplitude of υout is equal to 0.01 ×
Aυ.
(c)For Vin = VIN + 0.01sin(2π107 ∙ time), plot Vout = VOUT +
υout vs time. Is the amplitude of υout still equal to 0.01 × Aυ? If not, explain the possible reasons.
2N3903, 2N3904
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 12
W
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RJA
200
°C/W
Thermal Resistance, Junction−to−Case
RJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
BULK PACK TAPE & REEL
AMMO PACK
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:
August, 2012 − Rev. 8 2N3903/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
−
50
nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
−
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903 2N3904
hFE
20
40
35
70
50
100
30
60
15
30
−
− 150
300
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
−
−
0.2
0.3
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65 −
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N3903
2N3904
fT
250
300
−
−
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hie
1.0
1.0
8.0 10
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hre
0.1
0.5
5.0
8.0
X 10−4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hfe
50
100
200
400
−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
40
mhos
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
2N3903
2N3904
NF
−
−
6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
−
35
ns
Rise Time
tr
−
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
2N3903 2N3904
ts
−
−
175
200
ns
Fall Time
tf
−
50
ns
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.
ORDERING INFORMATION
Device
Package
Shipping†
2N3903RLRM
TO−92
2000 / Ammo Pack
2N3904
TO−92
5000 Units / Bulk
2N3904G
TO−92
(Pb−Free)
5000 Units / Bulk
2N3904RLRA
TO−92
2000 / Tape & Reel
2N3904RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904RLRM
TO−92
2000 / Ammo Pack
2N3904RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RLRP
TO−92
2000 / Ammo Pack
2N3904RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904ZL1
TO−92
2000 / Ammo Pack
2N3904ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
300 ns
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Rise Time
Figure 7. Storage Time Figure 8. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Figure 10.
h PARAMETERS
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA) Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance
IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages
IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients
3 3
STRAIGHT LEAD BENT LEAD
T
STRAIGHT LEAD
1.
2. 3.
4.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
NOTES:
DIM
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.021
0.46
0.53
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.135
---
3.43
---
V
0.135
---
3.43
---
NOTES:
BENT LEAD
1.
2. 3.
4.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
SECTION X−X
DIM
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.021
0.46
0.53
G
0.094
0.102
2.40
2.80
J
0.018
0.024
0.46
0.61
K
0.500
---
12.70
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.135
---
3.43
---
V
0.135
---
3.43
---
SECTION X−X
STYLES ON PAGE 2
DOCUMENT NUMBER:
98AON52857E
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION:
TO−92 (TO−226) 1 WATT
PAGE 1 OF 2
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1.
BASE
2.
EMITTER
3. STYLE 7:
COLLECTOR
PIN 1.
SOURCE
2.
DRAIN
3.
GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1 2. GATE
3. MAIN TERMINAL 2
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1.
ANODE
2.
ANODE
STYLE 8:
CATHODE
PIN 1.
DRAIN
2.
GATE
3.
SOURCE & SUBSTRATE
CASE 29−10 ISSUE A
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 4:
PIN 1.
CATHODE
2.
CATHODE
3. STYLE 9:
ANODE
PIN 1.
BASE 1
2.
EMITTER
3.
BASE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
DATE 08 MAY 2012
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
TO−92 (TO−226) 1 WATT
DOCUMENT NUMBER:
98AON52857E
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION:
TO−92 (TO−226) 1 WATT
PAGE 2 OF 2
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
1