1. [Common-Source with Resistive Load]
(a) Assume λ = 0 and γ = 0. For VDD = 5 V, Vin = 0.9 V + small signal, RD = 15 kΩ and Ldrawn = 2 µm, find out the value Wdrawn to obtain a voltage gain |Aυ| > 10 and VOUT (the DC biasing voltage at the output) close to 2.5 V as much as possible.
(b) Using the DC biasing condition in (a), plot VOUT as a function of VIN (from 0 V to 5 V) by DC sweep in Pspice. Compare the handcalculation result in (a) with the simulation result here. Note: the slope of the VOUT versus VIN curve at VIN = 0.9 V is the Av.
(c) Using the DC biasing conditions in (a), plot Vout as a function of time (from 0 to 0.1 second) in Pspice, when Vin = 0.9 V + B × sin(2π100t) and B = 0.01 V, 0.1 V and 1 V. What do you observe when the amplitude increases?
2
Vacuum permittivity (𝛜𝐨) = 𝟖. 𝟖𝟓 × 𝟏𝟎−𝟏𝟐 (F / m) Silicon oxide dielectric constant (𝛜𝐫) = 𝟑. 𝟗
